CMOS image sensor
6 H3 h. d6 R8 n. {( H* |◆ Image size Type 1/2.8 7 G, Z( r; w$ L" D3 J l0 K
◆ Total number of pixels 2704 (H) × 2104 (V) approx. 5.69 M pixels : H) @4 H- m* A) f1 ?: f) m
◆ Number of effective pixels 2616 (H) × 1964 (V) approx. 5.14 M pixels
. Z) _- X( ~+ c. J5 \1 ]0 @3 F◆ Number of active pixels 2608 (H) × 1960 (V) approx. 5.11 M pixels 5 P6 v0 c1 \9 n J. g- J
◆ Number of recommended recording pixels 2592 (H) × 1944 (V) approx. 5.04 M pixels & r$ [& z+ y. z( X4 N9 {
◆ Unit cell size 2.0 µm (H) × 2.0 µm (V)
% {) }& V* P7 T* J" R1 l. g' E◆ Optical black Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 13 pixels, rear 0 pixels
+ i% ~2 @; p" d: w◆ Dummy Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels $ _% ~' x, H, m; \
◆ Substrate material Silicon |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-29 20:53:01