$ g/ H" h5 \8 `% H( y3 }
Description+ E5 {2 E! c, {% m8 e9 _
The IMX179 is a diagonal 5.7 mm (Type 1/3.2) CMOS active pixel type image sensor with a square pixel array and 4 A( D2 D' ~3 _2 t
8.08M effective pixels. This chip operates with three power supplies, analogue 2.7 V, digital 1.2 V, and IF 1.8 V, and
6 r2 i" |& X+ t% I- nhas low power consumption. High sensitivity, low dark current, and no smear are achieved through the adoption of R,
' o. Z7 z4 N) o- _ K" h" QG, and B primary color pigment mosaic filters. This chip features an electronic shutter with variable charge-storage : |* I) Z; N: r$ m# z
time.& g |- @: |5 I! G; L9 U" x
In addition, this product is designed for use in cellular phone and tablet PC. When using this for another application,
; a. D. o% h/ C& mSony does not guarantee the quality and reliability of product.
( @) e; Q4 g& q' {/ S2 g) xTherefore, don’t use this for applications other than cellular phone and tablet PC. Consult your Sony sales . {. ~& o S% S9 Y/ d
representative if you have any questions.
W9 I+ K6 L4 x$ P7 m6 L# ]7 w' z `( \& ~. u
Features6 M |" M% H' Z7 S+ q, W$ V
◆CMOS active pixel type dots
, B* K& Y2 S# P! H4 k. ~9 j& l◆2-wire serial communication circuit on chip
: }& z$ m% p. b◆CSI2 serial data output
7 _4 E6 w, G, g1 e! ~# x* z◆Timing generator, H and V driver circuits on chip
9 b! L0 f; e* D$ l F* |3 |◆CDS/PGA on chip$ f/ x( H2 Y1 W5 U+ R* z# o1 C2 m
◆10-bit A/D converter on chip
# E u9 } e. x0 v# q+ h9 i◆Automatic optical black (OB) clamp circuit on chip
( R9 V, J9 r, \' C1 P# E, i◆PLL on chip (rectangular wave/sine wave)9 k V$ S, \7 C% d1 K! J' g4 ?* u
◆High sensitivity, low dark current, no smear
8 {9 j) N( Y9 e◆Excellent anti-blooming characteristics8 h! l5 V$ y) o2 ]
◆Variable-speed shutter function (1H units)7 G' j/ U0 l+ a k. a$ f
◆R, G, B primary color pigment mosaic filters on chip
$ B9 ]1 }" Y8 h& h◆Max. 30 frame/s in all-pixel scan mode( s! [8 U1 ?# E
◆Pixel rate: >260 MHz (>30 frame/s at All-pixel mode)3 B- \" Z% J2 ~. o7 k
/ d0 D7 I) ?$ s7 ?
( I" s2 y; g" i' A+ U3 V0 G
Device Structure
/ j) n- ?2 x5 a( P◆CMOS image sensor
- v% n/ V9 h* a* W+ @◆Image size . o. |( O# l& o3 C
: Diagonal 5.7 mm (Type 1/3.2)
; y5 c f. ~. B* J* W, E◆Total number of pixels + B5 K% |/ f }) }) ]
: 3288 (H) × 2512 (V) approx. 8.26M pixels& i$ q& @2 p* _* Z
◆Number of effective pixels ; n/ |( {' {. d6 W5 v$ J
: 3280 (H) × 2464 (V) approx. 8.08M pixels) M8 p& C) Z' a: k% j
◆Chip size 3 V+ Y' O( ^3 [% l
: 6.18 mm (H) × 5.85 mm (V). T. I: u; x. c* X4 P
◆Unit cell size , V$ C# @1 y8 u" Q
: 1.4µm (H) × 1.4µm (V)) }4 P+ P3 l1 X- m, P/ }
◆Substrate material
* r$ o' _; @, O: Silicon
3 P, Y3 T( [. x* H0 U; I, x: R3 T
IMX179QQH5-C_8.0.0_DataSheet.pdf
(1.53 MB, 下载次数: 393)
" K5 F& J7 h$ g+ C+ o# [! y
/ J* O, T `. ~) y6 v/ r- p4 q, Z
|
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2024-3-16 11:32:20