Device Structure ◆ CMOS image sensor + v# B. w3 ^ J, |* ^, `2 |
◆ Image size0 f) J8 _! N0 L# O- V6 z
Type 1/2.8 9 R6 y0 v9 C8 x4 z
◆ Total number of pixels . k5 ~3 u: w8 E+ m3 `8 w
1945 (H) × 1109 (V) approx. 2.16 M pixels
/ v- H9 H: ~4 \◆ Number of effective pixels
* v/ J; r' E. }6 y1945 (H) × 1097 (V) approx. 2.13 M pixels ; D2 y; e2 q& F9 b; f, C$ \( Q
◆ Number of active pixels
) m. `# `" m4 Z- Y$ K; K1937 (H) × 1097 (V) approx. 2.12 M pixels
# m) n9 r; Y) Z' N1 J6 r+ K+ t$ l3 B◆ Number of recommended recording pixels + y' C5 B( z( s+ \' Y2 @( M% i
1920 (H) × 1080 (V) approx. 2.07 M pixels
& {9 `0 @7 Z7 q' l& ^8 n◆ Unit cell size
$ F. C6 ]" X& R, r5 U5 T2.9 µm (H) × 2.9 µm (V) 7 t1 Y) N# j; R4 b1 P! m( a4 r& x# P
◆ Optical black 7 b5 j0 A) E' T7 {
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
' ?' O5 H0 i9 ?1 u" {, y◆ Dummy F- O; M- r: d) u ]. t6 K% u
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels 5 \$ _$ ?& j+ [( P* P. l9 ?0 |6 U
◆ Substrate material ' K$ J- W# K& @) V( A
Silicon
6 N& V& ?& f* k+ Z9 m$ L$ x |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23