Device Structure ◆ CMOS image sensor " H9 [4 ^% a' N- E" t
◆ Image size$ r+ r, p+ ~( O4 n3 \
Type 1/2.8
; Q6 }$ C0 D: e! ?& p◆ Total number of pixels " d( J5 s: W& s3 V3 f
1945 (H) × 1109 (V) approx. 2.16 M pixels
* R4 I3 z# i+ ^◆ Number of effective pixels
9 R: J4 ]3 t& M- S# Z( p$ v# a1945 (H) × 1097 (V) approx. 2.13 M pixels
) l, `3 q: L9 Z; a' S◆ Number of active pixels ( E- J' e, g2 M U3 N, Z! u8 n
1937 (H) × 1097 (V) approx. 2.12 M pixels
7 Y! S" p( [" ]* D◆ Number of recommended recording pixels
' v9 F; \ t( y7 d3 H1920 (H) × 1080 (V) approx. 2.07 M pixels
+ K% B2 H: X% R4 Y◆ Unit cell size
4 m% h* M$ J0 h0 B2 J$ O2.9 µm (H) × 2.9 µm (V) " B. y+ F1 p* _# f' G
◆ Optical black
6 M( Z# j$ U* F/ mHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
1 S+ o7 Q* O Q2 Q& f9 l◆ Dummy 2 R8 s7 R/ P k- K. b2 `+ `/ e
Horizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels 0 t! D8 j# p4 v7 m/ u
◆ Substrate material
1 x. x; s2 O( r/ `9 Y8 QSilicon
0 z, k$ v4 @8 Z |