[Chip parameters] SONY IMX307LQR-C芯片技术参数规格书尺寸

发表于 2022-3-30 14:18:23 | 显示全部楼层 |阅读模式
Device Structure ◆ CMOS image sensor : J$ U6 ~8 ^: N+ k: C
◆ Image size
( T6 |: ~7 F+ M" W& a: C, I  Type 1/2.8
5 B0 _/ w0 |4 j◆ Total number of pixels : k6 h/ X' W! p$ [) S& x1 A; {
1945 (H) × 1109 (V) approx. 2.16 M pixels " ^% K2 Q  S% K( y
◆ Number of effective pixels
( G3 X- }' N8 X/ ?- g* \1945 (H) × 1097 (V) approx. 2.13 M pixels
% X: ~( S" s) M1 X$ Q3 g' |- Q◆ Number of active pixels
$ y8 q( P* A0 f7 {8 W: E1937 (H) × 1097 (V) approx. 2.12 M pixels 7 X6 i" Y( G2 F+ q; k
◆ Number of recommended recording pixels % K, K' v& [, r4 R' A) O4 K
1920 (H) × 1080 (V) approx. 2.07 M pixels
4 U& Z; i$ Z0 W. Z, B, H◆ Unit cell size
1 p; x2 o4 H! V, O3 ?2.9 µm (H) × 2.9 µm (V)
; F( S4 q  e. h! G5 Z' w◆ Optical black
4 H8 Q8 ~& A2 s# bHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
+ V: p' ^! @% X2 T◆ Dummy
4 ~8 n2 Z& o! f7 t6 {+ E6 aHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
5 ?5 M" D3 u9 f2 j9 J◆ Substrate material 0 i2 `( h  j* U$ Q
Silicon
5 M$ F3 u0 o2 i# x0 ~
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