Device Structure ◆ CMOS image sensor
* D/ o* Y# w0 K4 W- F◆ Image size
2 _' M. m' ]! x6 ~+ i, F) B% Y' G Type 1/2.8 4 h* r% }( ~& _- X
◆ Total number of pixels
; u( j3 e' d6 O$ f: }1945 (H) × 1109 (V) approx. 2.16 M pixels " O% U6 {: M8 F1 i
◆ Number of effective pixels
4 f# S2 r# q9 [. Y- C" Y1945 (H) × 1097 (V) approx. 2.13 M pixels
% Z* g4 d( u! ^4 h: x◆ Number of active pixels ' o: X* Q5 o% G9 t3 K' w
1937 (H) × 1097 (V) approx. 2.12 M pixels 4 m7 m" n) }' [# X* u3 G- K5 T; c
◆ Number of recommended recording pixels " s6 f% U7 A# Z& T
1920 (H) × 1080 (V) approx. 2.07 M pixels ! M& W& _+ t9 e% n8 k
◆ Unit cell size
1 k/ K6 @' j2 n$ c! T0 e2.9 µm (H) × 2.9 µm (V)
0 a) o5 |3 i. X- j( @◆ Optical black
; Z1 G' S/ t4 D' C |; v S |9 MHorizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels 5 j5 Z b) y. O# S% k8 ?: D
◆ Dummy
1 B2 Y% |' |) ]( @$ a( UHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels
& j3 i2 n+ X( k7 n, N) H) h◆ Substrate material
, O' m0 B3 [, ISilicon3 `" R4 p3 A$ R7 a: l' X
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|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23