Device Structure ◆ CMOS image sensor ( ~1 {3 B6 Y8 `" P% c8 a
◆ Image size
4 ^) [. i- J8 _5 h Type 1/2.8
! M0 k B/ j7 D7 y◆ Total number of pixels
; y2 f6 S$ g; _: p1945 (H) × 1109 (V) approx. 2.16 M pixels
5 @. y% ~: s% O2 s' e8 @◆ Number of effective pixels
4 I- {9 |. @% l6 s8 h; R! [1945 (H) × 1097 (V) approx. 2.13 M pixels
9 N) Q6 V8 {9 y: X◆ Number of active pixels 0 B. U3 B/ j( a( @' c: A
1937 (H) × 1097 (V) approx. 2.12 M pixels 4 {- r8 q4 S% Z1 K4 F
◆ Number of recommended recording pixels + |8 P& B$ x8 J* i1 o: _
1920 (H) × 1080 (V) approx. 2.07 M pixels
+ F% E. a! C4 A' J◆ Unit cell size
: z; Y2 M3 P( V" X2.9 µm (H) × 2.9 µm (V) ( \% {$ v* u ?: V! a6 ~
◆ Optical black 9 Q# Z# E* c9 t8 T- v1 e
Horizontal (H) direction: Front 0 pixels, rear 0 pixels Vertical (V) direction: Front 10 pixels, rear 0 pixels
, T+ w+ x d9 x8 B◆ Dummy
; D. E: w6 o+ O, |# w3 x. IHorizontal (H) direction: Front 0 pixels, rear 3 pixels Vertical (V) direction: Front 0 pixels, rear 0 pixels / g- k+ o" B1 @4 {
◆ Substrate material
2 t! K& m$ S! k! g+ t# C' jSilicon
5 J2 o& G. C. {" {- e3 a |
|Shenzhen Lianshi Electronics Co., Ltd
( 粤ICP备13003189号 )
发表于 2022-3-30 14:18:23